Ferromagnetic ordering of silicon vacancies in N-doped silicon carbide

Applied Physics Letters

Volumn 96, Issue 1, 2010, Pages

  Zhao, Mingwen ^a   Pan, Fengchun ^a   Mei, Liangmo ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; FERROMAGNETIC ORDERINGS; FIRST-PRINCIPLES CALCULATION; HIGH CURIE TEMPERATURE; MAGNETIC INTERACTIONS; N-DOPED; NITROGEN IMPURITY; SIC MATERIALS; SPIN CONFIGURATIONS;

DEFECTS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC PROPERTIES; SILICON CARBIDE; VACANCIES;

SILICON;

EID: 75749157347     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3291562     Document Type: Article

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