Magnetic state around cation vacancies in IIâ"VI semiconductors

Physical Review Letters

Volumn 100, Issue 2, 2008, Pages

  Chanier, T ^a   Opahle, I ^b   Sargolzaei, M ^b,c   Hayn, R ^a   Lannoo, M ^a  

^a CNRS   (France)

^b IFW DRESDEN   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC PROPERTIES; MOLECULAR MODELING; POSITIVE IONS;

CATION VACANCIES; FIRST PRINCIPLES CALCULATIONS;

SEMICONDUCTOR MATERIALS;

EID: 38649100980     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.026405     Document Type: Article

References (24)

1. I. AutiÄ, J. Fabian, and S.â.D. Sarma, Rev. Mod. Phys. 76, 323 (2004). RMPHAT 0034-6861 10.1103/RevModPhys.76.323
2. I.â.S. Elfimov, S. Yunoki, and G.â.A. Sawatzky, Phys. Rev. Lett. 89, 216403 (2002). PRLTAO 0031-9007 10.1103/PhysRevLett.89.216403
3. J. Osorio-Guillén, S. Lany, S.â.V. Barabash, and A. Zunger, Phys. Rev. Lett. 96, 107203 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.96. 107203
4. G. Bouzerar and T. Ziman, Phys. Rev. Lett. 96, 207602 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.96.207602
5. M. Venkatesan, C.â.B. Fitzgerald, J.â.G. Lunney, and J.â.M.â.D. Coey, Phys. Rev. Lett. 93, 177206 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.93.177206
6. W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, Appl. Phys. Lett. 91, 062113 (2007). APPLAB 0003-6951 10.1063/1.2769391
7. F. Rong and G.â.D. Watkins, Phys. Rev. Lett. 58, 1486 (1987). PRLTAO 0031-9007 10.1103/PhysRevLett.58.1486
8. A.â.F. Kohan, G. Ceder, D. Morgan, and C.â.G. Van der Walle, Phys. Rev. B PRBMDO 0163-1829 61, 15019 (2000). 10.1103/PhysRevB.61.15019
9. P. Erhart, K. Albe, and A. Klein, Phys. Rev. B PRBMDO 0163-1829 73, 205203 (2006). 10.1103/PhysRevB.73.205203
10. H.â.J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H.-P. SchÃnherr, and K.â.H. Ploog, Phys. Rev. Lett. 87, 016601 (2001). PRLTAO 0031-9007 10.1103/PhysRevLett.87.016601
11. P. Gopal and N.â.A. Spaldin, Phys. Rev. B PRBMDO 0163-1829 74, 094418 (2006). 10.1103/PhysRevB.74.094418
12. D. Galland and A. Herve, Phys. Lett. 33A, 1 (1970). PYLAAG 0375-9601 10.1016/0375-9601(70)90614-6
13. F.â.C. Rong, W.â.A. Barry, J.â.F. Donegan, and G.â.D. Watkins, Phys. Rev. B PRBMDO 0163-1829 54, 7779 (1996). 10.1103/PhysRevB.54. 7779
14. K. Koepernik and H. Eschrig, Phys. Rev. B PRBMDO 0163-1829 59, 1743 (1999); 10.1103/PhysRevB.59.1743
15. http://www.FPLO.de.
16. J.â.P. Perdew and Y. Wang, Phys. Rev. B PRBMDO 0163-1829 45, 13244 (1992). 10.1103/PhysRevB.45.13244
17. T.â.M. Sabine and S. Hogg, Acta Crystallogr. B 25, 2254 (1969).
18. J.â.C. Jamieson and H.â.H. Demarest, J. Phys. Chem. Solids 41, 963 (1980). JPCSAW 0022-3697 10.1016/0022-3697(80)90101-8
19. CRC Handbook of Chemistry and Physics, edited by, R.â.C. Weast, D.â.R. Lide, M.â.J. Astle, and, W.â.H. Beyer, (Chemical Rubber, Boca Raton, 1990), 70th ed., pp. E-106 and E-110.
20. L. Muratov, S. Little, Y. Yang, B.â.R. Cooper, T.â.H. Myers, and J.â.M. Wills, Phys. Rev. B PRBMDO 0163-1829 64, 035206 (2001). 10.1103/PhysRevB.64.035206
21. M. Lannoo and J. Bourgoin, Point Defects in Semiconductors I, Theoretical Aspects (Springer-Verlag, Berlin, 1981).
22. O. Gunnarson, A.â.V. Postnikov, and O.â.K. Andersen, Phys. Rev. B PRBMDO 0163-1829 40, 10407 (1989). 10.1103/PhysRevB.40.10407
23. F.â.H. Leiter, H.â.R. Alves, A. Hofstaetter, D.â.M. Hofmann, and B.â.K. Meyer, Phys. Status Solidi (b) PSSBBD 0370-1972 226, R4 (2001). 10.1002/1521-3951(200107)226:1<R4::AID-PSSB99994>3.0. CO;2-F
24. J. Friedel, M. Lannoo, and G. Leman, Phys. Rev. 164, 1056 (1967). PHRVAO 0031-899X 10.1103/PhysRev.164.1056