Classification and benchmarking of III-V MOSFETs for CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 155-156

  Passlack, M ^a   Doornbos, G ^a   Wann, C ^b   Sun, Y C ^b  

^a TSMC Europe BV   (Belgium)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Benchmarking; CMOS; III V MOSFET; QWFET

Indexed keywords

CHANNEL LAYERS; CLASSIFICATION SCHEME; CMOS; FIRST DERIVATIVE; GATE VOLTAGES; III-V MOSFET; INAS; MATURITY LEVELS; MOSFETS; N-CHANNEL DEVICES; QWFET; SCHOTTKY GATE;

BENCHMARKING; DRAIN CURRENT; INDIUM ARSENIDE; MOSFET DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957861790     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556209     Document Type: Conference Paper

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