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Volumn 29, Issue 1, 2011, Pages

Gate coupling and carrier distribution in silicon nanowire/nanoribbon transistors operated in electrolyte

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CARRIER DISTRIBUTIONS; DOPING CONCENTRATION; GATE CAPACITANCE; GATE COUPLING; HIGH SENSITIVITY; INTERFACE PROPERTY; ON-CURRENTS; REAL TIME SENSING; SIMULATION RESULT; SUB-THRESHOLD BEHAVIOR; TOP SURFACE; TRANSFER CHARACTERISTICS;

EID: 79952015357     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3528215     Document Type: Article
Times cited : (8)

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    • note
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.