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Volumn 98, Issue 7, 2011, Pages

Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO 2 films using Ge-ion implantation and neutron irradiation methods

(7) Chen, Q a Lu, T a Xu, M b,c Meng, C d Hu, Y a Sun, K e Shlimak, I f

a SICHUAN UNIVERSITY (China)

b SICHUAN NORMAL UNIVERSITY (China)

c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

d RESEARCH CENTER OF LASER FUSION (China)

e UNIVERSITY OF MICHIGAN (United States)

f BAR ILAN UNIVERSITY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

MASS TRANSFER PROCESS; META-STABLE STATE; NANOCRYSTAL SIZES; NANOFABRICATION; NEUTRON TRANSMUTATION DOPING; THEORETICAL RESULT; VOLUME DENSITY;

DOPING (ADDITIVES); ION IMPLANTATION; NANOCRYSTALS; NEUTRON IRRADIATION; SILICON COMPOUNDS;

GERMANIUM;

EID: 79951919859 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3553770 Document Type: Article

Times cited : (12)

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