N-doped GeTe as performance booster for embedded phase-change memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Fantini, A ^a   Sousa, V ^a   Perniola, L ^a   Gourvest, E ^a,b,c   Bastien, J C ^a   Maitrejean, S ^a   Braga, S ^d   Pashkov, N ^a   Bastard, A ^a,b   Hyot, B ^a   Roule, A ^a   Persico, A ^a   Feldis, H ^a   Jahan, C ^a   Nodin, J F ^a   Blachier, D ^a   Toffoli, A ^a   Reimbold, G ^a   Fillot, F ^a   Pierre, F ^a   Annunziata, R ^b   Benshael, D ^b   Mazoyer, P ^b   Vallee C ^c   Billon, T ^a   Hazart, J ^a   De Salvo, B ^a   Boulanger, F ^a   more..

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c MINATEC   (France)

^d UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; AUTOMOTIVE APPLICATIONS; AUTOMOTIVE MARKETS; CONSUMER APPLICATIONS; CRYSTALLIZATION TEMPERATURE; DATA RETENTION; EXCELLENT PERFORMANCE; LOW POWER; N-DOPED; PHASE CHANGES; STRINGENT REQUIREMENT;

ELECTRON DEVICES;

ACTIVATION ENERGY;

EID: 79951843154     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703441     Document Type: Conference Paper

References (11)

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