High-Q torsional mode Si triangular beam resonators encapsulated using SiGe thin film

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Naito, Y ^a   Helin, P ^b   Nakamura, K ^a   De Coster, J ^b   Guo, B ^b   Haspeslagh, L ^b   Onishi, K ^a   Tilmans, H A C ^b  

^a PANASONIC CORPORATION   (Japan)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM RESONATORS; DC BIAS; HIGH QUALITY FACTORS; MOTIONAL RESISTANCE; QUALITY FACTORS; SIGE THIN FILM; TEMPERATURE COEFFICIENT OF FREQUENCIES; TEMPERATURE RANGE; TORSIONAL MODES; TORSIONAL RESONATOR; WAFER LEVEL;

ELECTRON DEVICES; RESONATORS; SILICON ALLOYS; SILICON WAFERS; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951829560     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703313     Document Type: Conference Paper

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