Wafer level encapsulation technology for MEMS devices using an HF-permeable PECVD SIOC capping layer

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2008, Pages 798-801

  Verheijden, G J A M ^a   Koops, G E J ^a   Phan, K L ^b   Van Beek, J T M ^b  

^a NXP TSMC Research Center   (Belgium)

^b NXP TSMC Research Center   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENCAPSULATION; MECHANICAL ENGINEERING; MECHANICS; MECHATRONICS; MEMS; MICROELECTROMECHANICAL DEVICES; REACTIVE ION ETCHING; TECHNOLOGY;

CAPPING LAYER; INTERNATIONAL CONFERENCES; LOW TEMPERATURE; MEMS DEVICES; MICRO-ELECTRO MECHANICAL SYSTEMS; WAFER-LEVEL ENCAPSULATION;

COMPOSITE MICROMECHANICS;

EID: 50249106306     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2008.4443777     Document Type: Conference Paper

References (7)

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