Passive TCF compensation in high Q silicon micromechanical resonators

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2010, Pages 116-119

  Samarao, A K ^a   Casinovi, G ^a   Ayazi, F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; HIGH QUALITY FACTORS; LINEAR TEMPERATURE; LOW POWER; MATERIAL PROPERTY; MICROMECHANICAL RESONATOR; RESONANT SENSORS; SILICON BULK ACOUSTIC RESONATORS; SILICON MICRORESONATORS; TEMPERATURE COMPENSATION TECHNIQUE; THERMOMIGRATION; WAFER LEVEL;

BORON; MATERIALS PROPERTIES; MECHANICAL ENGINEERING; MECHANICS; REACTIVE ION ETCHING; RESONATORS; SILICON WAFERS;

HIGH TEMPERATURE ENGINEERING;

EID: 77952779893     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2010.5442553     Document Type: Conference Paper

References (8)

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