A 2-bit/cell, maskless, self-aligned resistance memory with high thermal stability

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2007, Pages

  Ho, Chiahua ^a   Lee, Ming Daou ^b   Pan, Chen Ling ^c   Lai, Erh Kun ^a   Yao, Yeong Der ^d   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^d INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; METALLIC FILMS; THERMODYNAMIC STABILITY; TUNGSTEN;

DATA RETENTION; MULTILEVEL CELL (MLC) RESISTANCE DEVICE; MULTIPLE BITS PER LAYER; OHMIC TRANSPORT MECHANISMS; PLASMA OXIDATION;

DATA STORAGE EQUIPMENT;

EID: 34548850610     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2007.378937     Document Type: Conference Paper

References (3)

1. D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U-In Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett., 88, 232106 (2006).
2. R. D. Bringans, H. Hochst, and H. R. Shanks, Phys. Rev. B 24, 3481 (1981).
3. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials. Clarendon Press. Oxford, 1979, p 33.