SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 6, 2011, Pages

InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies

(3) Fang, Z L a Lin, Y X a Kang, J Y a

a XIAMEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR TUNING; GAN ISLANDS; GROWTH BEHAVIOR; IN-SITU; INGAN/GAN; INGAN/GAN QUANTUM WELL; LUMINESCENCE PROPERTIES; LUMINESCENCE STUDIES; POLAR ANGLES; SELF-ORGANIZED;

GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

LUMINESCENCE;

EID: 79951779854 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3554421 Document Type: Article

Times cited : (12)

References (19)

1
- 33748468430
- Prestrained effect on the emission properties of InGaN/GaN quantum-well structures
- DOI 10.1063/1.2335384
- C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, C. C. Yang, C. W. Hsu, and L. C. Chen, Appl. Phys. Lett. 0003-6951 89, 051913 (2006). 10.1063/1.2335384 (Pubitemid 44350230)
- (2006) Applied Physics Letters , vol.89 , Issue.5 , pp. 051913
- Huang, C.-F.¹ Tang, T.-Y.² Huang, J.-J.³ Shiao, W.-Y.⁴ Yang, C.C.⁵ Hsu, C.-W.⁶ Chen, L.C.⁷

2
- 34347380524
- A well protection layer as a novel pathway to increase indium composition: A route towards green emission from a blue InGaN/GaN multiple quantum well
- DOI 10.1088/0957-4484/18/29/295402, PII S0957448407472129
- J. W. Ju, H. S. Kim, L. W. Jang, J. H. Baek, D. C. Shin, and I. H. Lee, Nanotechnology 0957-4484 18, 295402 (2007). 10.1088/0957-4484/18/29/295402 (Pubitemid 47025241)
- (2007) Nanotechnology , vol.18 , Issue.29 , pp. 295402
- Ju, J.-W.¹ Kim, H.-S.² Jang, L.-W.³ Baek, J.H.⁴ Shin, D.-C.⁵ Lee, I.-H.⁶

3
- 42549158456
- Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment
- DOI 10.1063/1.2909551
- H. C. Lin, R. S. Lin, and J. I. Chyi, Appl. Phys. Lett. 0003-6951 92, 161113 (2008). 10.1063/1.2909551 (Pubitemid 351590685)
- (2008) Applied Physics Letters , vol.92 , Issue.16 , pp. 161113
- Lin, H.-C.¹ Lin, R.-S.² Chyi, J.-I.³

4
- 45749084487
- 0003-6951, 10.1063/1.2949983
- K. Y. Zang, S. J. Chua, J. H. Teng, N. S. S. Ang, A. M. Yong, and S. Y. Chow, Appl. Phys. Lett. 0003-6951 92, 243126 (2008). 10.1063/1.2949983
- (2008) Appl. Phys. Lett. , vol.92 , pp. 243126
- Zang, K.Y.¹ Chua, S.J.² Teng, J.H.³ Ang, N.S.S.⁴ Yong, A.M.⁵ Chow, S.Y.⁶

5
- 79951802451
- (American Scientific Publishers, Valencia, CA)
- Z. L. Fang, Encyclopedia of Semiconductor Nanotechnology (American Scientific Publishers, Valencia, CA, 2011).
- (2011) Encyclopedia of Semiconductor Nanotechnology
- Fang, Z.L.¹

6
- 49149091530
- 0003-6951, 10.1063/1.2963029
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, Appl. Phys. Lett. 0003-6951 93, 041102 (2008). 10.1063/1.2963029
- (2008) Appl. Phys. Lett. , vol.93 , pp. 041102
- Schubert, M.F.¹ Xu, J.² Kim, J.K.³ Schubert, E.F.⁴ Kim, M.H.⁵ Yoon, S.⁶ Lee, S.M.⁷ Sone, C.⁸ Sakong, T.⁹ Park, Y.¹⁰

7
- 69049101737
- 1077-260X, 10.1109/JSTQE.2009.2016576
- H. P. Zhao, R. A. Arif, and N. Tansu, IEEE J. Sel. Top. Quantum Electron. 1077-260X 15, 1104 (2009). 10.1109/JSTQE.2009.2016576
- (2009) IEEE J. Sel. Top. Quantum Electron. , vol.15 , pp. 1104
- Zhao, H.P.¹ Arif, R.A.² Tansu, N.³

8
- 69049102117
- 0003-6951, 10.1063/1.3205127
- S. H. Park, D. Ahn, B. H. Koo, and J. W. Kim, Appl. Phys. Lett. 0003-6951 95, 063507 (2009). 10.1063/1.3205127
- (2009) Appl. Phys. Lett. , vol.95 , pp. 063507
- Park, S.H.¹ Ahn, D.² Koo, B.H.³ Kim, J.W.⁴

9
- 66749114866
- 0883-7694, 10.1557/mrs2009.93
- D. F. Feezell, M. C. Schmidt, S. P. Denbaars, and S. Nakamura, MRS Bull. 0883-7694 34, 318 (2009). 10.1557/mrs2009.93
- (2009) MRS Bull. , vol.34 , pp. 318
- Feezell, D.F.¹ Schmidt, M.C.² Denbaars, S.P.³ Nakamura, S.⁴

10
- 66849129387
- 0883-7694, 10.1557/mrs2009.95
- F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, and K. Thonke, MRS Bull. 0883-7694 34, 328 (2009). 10.1557/mrs2009.95
- (2009) MRS Bull. , vol.34 , pp. 328
- Scholz, F.¹ Wunderer, T.² Neubert, B.³ Feneberg, M.⁴ Thonke, K.⁵

11
- 47549104924
- 0003-6951, 10.1063/1.2956404
- M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 0003-6951 93, 021126 (2008). 10.1063/1.2956404
- (2008) Appl. Phys. Lett. , vol.93 , pp. 021126
- Funato, M.¹ Hayashi, K.² Ueda, M.³ Kawakami, Y.⁴ Narukawa, Y.⁵ Mukai, T.⁶

12
- 27144482123
- Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
- DOI 10.1103/PhysRevLett.95.127402, 127402
- A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett. 0031-9007 95, 127402 (2005). 10.1103/PhysRevLett.95. 127402 (Pubitemid 41505655)
- (2005) Physical Review Letters , vol.95 , Issue.12 , pp. 1-4
- Hangleiter, A.¹ Hitzel, F.² Netzel, C.³ Fuhrmann, D.⁴ Rossow, U.⁵ Ade, G.⁶ Hinze, P.⁷

13
- 64149106547
- 0003-6951, 10.1063/1.3104850
- M. Yoshikawa, M. Murakami, H. Ishida, and H. Harima, Appl. Phys. Lett. 0003-6951 94, 131908 (2009). 10.1063/1.3104850
- (2009) Appl. Phys. Lett. , vol.94 , pp. 131908
- Yoshikawa, M.¹ Murakami, M.² Ishida, H.³ Harima, H.⁴

14
- 64349116292
- 0003-6951, 10.1063/1.3115807
- A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, I. -H. Lee, J. -W. Ju, and S. J. Pearton, Appl. Phys. Lett. 0003-6951 94, 142103 (2009). 10.1063/1.3115807
- (2009) Appl. Phys. Lett. , vol.94 , pp. 142103
- Polyakov, A.Y.¹ Smirnov, N.B.² Govorkov, A.V.³ Lee, I.-H.⁴ Ju, J.-W.⁵ Pearton, S.J.⁶

15
- 33645920309
- 0021-8979, 10.1063/1.2180532
- M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, J. Appl. Phys. 0021-8979 99, 073505 (2006). 10.1063/1.2180532
- (2006) J. Appl. Phys. , vol.99 , pp. 073505
- Shiojiri, M.¹ Chuo, C.C.² Hsu, J.T.³ Yang, J.R.⁴ Saijo, H.⁵

16
- 34250709101
- Self-organization of 3D triangular GaN nanoislands and the shape variation to hexagonal
- DOI 10.1021/jp071803c
- Z. L. Fang and J. Y. Kang, J. Phys. Chem. C 1932-7447 111, 7889 (2007). 10.1021/jp071803c (Pubitemid 46955479)
- (2007) Journal of Physical Chemistry C , vol.111 , Issue.22 , pp. 7889-7892
- Zhilai, F.¹ Junyong, K.²

17
- 43249111640
- 1932-7447, 10.1021/jp7112522
- Z. L. Fang, J. Y. Kang, W. J. Huang, H. T. Sun, M. Lu, J. F. Kong, and W. Z. Shen, J. Phys. Chem. C 1932-7447 112, 4925 (2008). 10.1021/jp7112522
- (2008) J. Phys. Chem. C , vol.112 , pp. 4925
- Fang, Z.L.¹ Kang, J.Y.² Huang, W.J.³ Sun, H.T.⁴ Lu, M.⁵ Kong, J.F.⁶ Shen, W.Z.⁷

18
- 15344351565
- 0556-2805, 10.1103/PhysRevB.60.R8473
- J. E. Northrup and J. Neugebauer, Phys. Rev. B 0556-2805 60, R8473 (1999). 10.1103/PhysRevB.60.R8473
- (1999) Phys. Rev. B , vol.60 , pp. 8473
- Northrup, J.E.¹ Neugebauer, J.²

19
- 79951800875
- See supplementary material at E-APPLAB-98-021107 for further discussions of the QWs structure at the site "A," and an example of tetrachromatic emissions from InGaN/GaN QWs on GaN islands
- See supplementary material at http://dx.doi.org/10.1063/1.3554421 E-APPLAB-98-021107 for further discussions of the QWs structure at the site "A," and an example of tetrachromatic emissions from InGaN/GaN QWs on GaN islands.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.