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Applied Physics Letters

Volumn 98, Issue 6, 2011, Pages

Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)

(4) Moshe, O a Rich, D H a Damilano, B b Massies, J b

a BEN GURION UNIVERSITY OF THE NEGEV (Israel)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BIAXIAL TENSILE STRESS; GAN/ALN QUANTUM DOTS; III-NITRIDE; IN-PLANE; LOCAL CONTROL; POLARIZED EMISSIONS; POLARIZED LUMINESCENCE; QUANTUM DOT ENSEMBLE; SELECTIVE CONTROL; SI (1 1 1); SI SUBSTRATES; STRANSKI-KRASTANOV METHOD; THERMAL EXPANSION COEFFICIENTS; UNIAXIAL STRESS;

NITRIDES; SILICON; THERMAL EXPANSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79951777475 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3554371 Document Type: Article

Times cited : (6)

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