HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 470-472

  Takagi, Yuta ^a   Miyagawa, Reina ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A plane sapphire; AlN; HVPE; Nitridation

Indexed keywords

A-PLANE SAPPHIRE; ALN; C-PLANE SAPPHIRE SUBSTRATES; CRACK FREE; FULL WIDTHS AT HALF MAXIMUMS; HIGH QUALITY; HVPE; HYDRIDE VAPOR PHASE EPITAXY;

NITRIDATION; SUBSTRATES; SURFACE ROUGHNESS;

SAPPHIRE;

EID: 79951698806     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000582     Document Type: Article

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