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Volumn 257, Issue 11, 2011, Pages 5007-5011

Growth and characterization of polycrystalline Ge 1-x C x by reactive pulsed laser deposition

(8) Hernandez M P a Farias M H b Castillon F F b Díaz, Jesús A b Avalos, M b Ulloa, L c Gallegos, J A d Yee Madeiros, H d

a UNIVERSITY OF HAVANA (Cuba)

b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO (Mexico)

c UNIVERSITY OF GUADALAJARA (Mexico)

d INSTITUTO POLITÉCNICO NACIONAL (Mexico)

Author keywords

Ge C films; Pulsed laser deposition; X ray diffraction; XPS analysis

Indexed keywords

GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; PULSED LASER DEPOSITION; PULSED LASERS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

C FILMS; CLUSTER FORMATIONS; GERMANIUM-CARBON ALLOYS; INTERSTITIAL SITES; POLYCRYSTALLINE THIN FILM; REACTIVE PULSED LASER DEPOSITION; SUBSTRATE TEMPERATURE; XPS ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79951680387 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.01.011 Document Type: Article

Times cited : (11)

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