C incorporation in epitaxial layers grown on Ge(001): An ab initio study

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 12, 2000, Pages R7723-R7726

  Gall, D ^a   D'Arcy Gall J ^a   Greene, J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

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Indexed keywords

EID: 84945397940     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.R7723     Document Type: Article

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