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Volumn 88, Issue 1, 2000, Pages 96-104

Epitaxial metastable Ge1 - yCy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites

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Indexed keywords


EID: 0002132994     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373629     Document Type: Article
Times cited : (8)

References (29)
  • 6
    • 0000148888 scopus 로고    scopus 로고
    • See, for example, H. J. Osten, J. Griesche, and S. Scalese, Appl. Phys. Lett. 74, 836 (1999); J. L. Hoyt, T. O. Mitchell, K. Rim, D. V. Singh, and J. F. Gibbons, Thin Solid Films 321, 41 (1998).
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 836
    • Osten, H.J.1    Griesche, J.2    Scalese, S.3
  • 24
    • 85037515971 scopus 로고    scopus 로고
    • note
    • Si-C split interstitials may also form due to the presence of 1 at. % Si, but their concentration is expected to be negligible.
  • 28
    • 0001548018 scopus 로고
    • edited by S. Mahajan Elsevier, New York
    • G. Davies and R. C. Newman, in Handbook on Semiconductors, edited by S. Mahajan (Elsevier, New York, 1994), Vol. 3, p. 1557.
    • (1994) Handbook on Semiconductors , vol.3 , pp. 1557
    • Davies, G.1    Newman, R.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.