Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers

Journal of Applied Physics

Volumn 90, Issue 8, 2001, Pages 3910-3918

  D'Arcy Gall, J ^a   Gall, D ^a   Petrov, I ^a   Desjardins, P ^a,b   Greene, J E ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039149678     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402137     Document Type: Article

References (27)

1. R. I. Scace and G. A. Slack, J. Chem. Phys. 30, 1551 (1959).
2. J. Tersoff, Phys. Rev. Lett. 74, 5080 (1995).
3. R. Duschl, O. G. Schmidt, W. Winter, K. Eberl, M. W. Dashiell, J. Kolodzey, N. Y. Jin-Phillipp, and F. Phillipp, Appl. Phys. Lett. 74, 1150 (1999).
4. M. W. Dashiell, J. Kolodzey, P. Boucaud, V. Yam, and J.-M. Lourtioz, J. Vac. Sci. Technol. B 18, 1728 (2000).
5. B.-K. Yang, M. Krishnamurthy, and W. H. Weber, J. Appl. Phys. 82, 3287 (1997).
6. W. H. Weber, B.-K. Yang, and M. Krishnamurthy, Appl. Phys. Lett. 73, 626 (1998).
7. L. Hoffman, J. C. Bach, B. B. Nielsen, P. Leary, R. Jones, and S. Öberg, Phys. Rev. B 55, 11167 (1997).
8. P. C. Kelires, Phys. Rev. B 60, 10837 (1999).
9. C. Guedj, J. Kolodzey, and A. Hairie, Phys. Rev. B 60, 15150 (1999).
10. J. Tersoff, Phys. Rev. Lett. 64, 1757 (1990).
11. D. Gall, J. D'Arcy-Gall, and J. E. Greene, Phys. Rev. B 62, 7723 (2000).
12. J. D'Arcy-Gall, D. Gall, P. Desjardins, I. Petrov, and J. E. Greene, Phys. Rev. B 62, 11203 (2000).
13. J. F. Ziegler, J. P. Biersack, and U. Littmark, Stopping and Ranges of Ions in Solids (Pergamon, New York, 1985).
14. N.-E. Lee, M. Matsuoka, M. R. Sardela, Jr., F. Tian, and J. E. Greene, J. Appl. Phys. 80, 812 (1996).
15. G. A. Tomasch, Y.-W. Kim, L. C. Markert, N.-E. Lee, and J. E. Greene, Thin Solid Films 223, 212 (1993).
16. X.-J. Zhang, G. Xue, A. Agarwal, R. Tsu, M.-A. Hasan, J. E. Greene, and A. Rockett, J. Vac. Sci. Technol. A 11, 2553 (1993).
17. J. P. Noel, N. Hirashita, L. C. Marken, Y.-W. Kim, J. E. Greene, J. Knall, W.-X. Ni, M. A. Hasan, and J.-E. Sundgren, J. Appl. Phys. 65, 1189 (1989).
18. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
19. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); 49, 14251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 54, 11169 (1996).
20. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); 49, 14251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 54, 11169 (1996).
21. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); 49, 14251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 54, 11169 (1996).
22. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); 49, 14251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 54, 11169 (1996).
23. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
24. J. P. Perdew and Y. Wang, Phys. Rev. B 45, 13244 (1992).
25. P. Brüesch, Phonons: Theory and Experiments I (Springer-Verlag, Berlin, 1982), p. 129.
26. G. Davies and R. C. Newman, in Handbook on Semiconductors, edited by S. Mahajan (Elsevier, New York, 1994), Vol. 3. p. 1557.
27. See annealing experiments in: J. D'Arcy-Gall, P. Desjardins, I. Petrov, J. E. Greene, J.-E. Paultre, R. A. Masut, S. C. Gujrathi, and S. Roorda, J. Appl. Phys. 88, 96 (2000).