Electron beam annealing of Fe + implanted Si nanostructures

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 10, 2010, Pages 6556-6561

  Markwitz, A ^a,b   Fang, F ^a   Kaiser, J ^b   Carder, D A ^a,b   Kennedy, J ^a,b   Zulicke U ^b,c   Johnson, P B ^a  

^a GNS SCIENCE   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

^c MASSEY UNIVERSITY   (New Zealand)

Author keywords

Electron beam annealing; Fe; Silicon nanowhiskers

Indexed keywords

AFM; AVERAGE HEIGHT; BEFORE AND AFTER; ELECTRON BEAM ANNEALING; ENHANCED FIELD EMISSION; FE; FLUENCES; INDUCED STRESS; INITIAL VALUES; MAGNETIC IONS; RBS ANALYSIS; SI DEVICES; SI NANOSTRUCTURES; SI SURFACES; SILICON NANOSTRUCTURES; SURFACE DENSITY;

ANNEALING; CRYSTAL WHISKERS; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; FIELD EMISSION; IONS; SILICON;

NANOWHISKERS;

EID: 79951679826     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2650     Document Type: Article

References (30)

1. A. Markwitz, H. Baumann, E. F. Krimmel, K. Bethge, and W. Grill, Appl. Phys. Lett. 64, 2652 (1994).
2. S. Johnson, A. Markwitz, M. Rudolphi, and H. Baumann, J. Appl. Phys. 96, 605 (2004).
3. A. Markwitz, S. Johnson, and M. Rudolphi, Appl. Phys. Lett. 89, 153122 (2006).
4. S. Johnson, A. Markwitz, M. Rudolphi, H. Baumann, S. P. Oei, K. B. K. Teo, and W. I. Milne, Current Appl. Phys. 6, 503 (2006).
5. C. T. Lu, S. Johnson, S. P. Lansley, R. J. Blaikie, and A. Markwitz, J. Vac. Sci. Technol. B 23, 1445 (2005).
6. S. Johnson, A. Markwitz, M. Rudolphi, H. Baumann, P. Y. Kuo, R. Blaikie, and A. Mucklich, J. Appl. Phys. 97, 094301 (2005).
7. S. Johnson, A. Markwitz, M. Rudolphi, H. Baumann, S. P. Oei, Teo K.B.K., and W. I. Milne, Appl. Phys. Lett. 85, 3277 (2004).
8. S. Johnson, A. Markwitz, M. Rudolphi, and H. Baumann, J. Vacc Sci. Techno. B 23, 1459 (2005).
9. S. Johnson, U. Zulicke, and A. Markwitz, J. Appl. Phys. 101, 123712 (2007).
10. C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976).
11. H. H. Busta, Vacuum Microelectronics, edited by W. Zhu, Wiley, NJ, USA (2001), p. 289.
12. D. V. Scheible, C. Weiss, J. P. Kotthaus, and R. H. Blick, Phys. Rev. Lett. 93, 186801 (2004).
13. A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, J. Vac. Sci. Techno. B 15, 2773 (1997).
14. S. Johnson, A. A. G. Driskeill-Smuith, D. G. Hasko, and H. Ahmed, Cold Cathodes II, edited by M. Cahay, K. L. Jensen, and V. T. Binh, Electrochemical Society, New Jersey (2002), p. 3.
15. S. T. Purcell, Vu Thien Binh, N. Garcia, M. Lin E, R. P. Andres, and R. Refienberger, Phys. Rev. B. 49, 17259 (1994).
16. Z. Yang, K. P. Homewood, M. S. Finney, M. A. Harry, and K. J. Reeson, J. Appl. Phys. 78, 1958 (1995).
17. K. Radermacher, S. Mantl, Ch. Dieker, and H. Luth, Appl. Phys. Lett. 59, 2145 (1991).
18. A. E. White, K. T. Short, R. C. Dynes, J. P. Garno, and J. M. Gibson, Appl. Phys. Lett. 50, 95 (1987).
19. V. Borisenko, Semiconducting Silicides, 1st edn., Springer, Berlin (2000).
20. P. R. Bandara, J. Park, J. S. Lee, Y. J. Tang, L. H. Chen, S. Jin, S. A. Song, and J. R. O'Brien, Appl. Phys. Lett. 8, 112502 (2006).
21. F. Fang and A. Markwitz, Physica E Low-dimensional Systems and Nanostructures 41, 1853 (2009).
22. F. Fang and A. Markwitz, J. Nanosci. Nanotechno. 9, 2950 (2009).
23. A. Markwitz and J. Kennedy, Int. J. Nanotechnology 6, 369 (2009).
24. H. Baumann and K. Bethge, Nucl. Instr. Meth. 189, 107 (1981).
25. A. Markwitz, K. Kant, D. Carder, and P. B. Johnson, AIP Proceedings Series 1151, 149 (2009).
26. http://www.nanosurf.com/
27. A. Markwitz, S. Johnson, M. Rudolphi, H. Baumann, and A. Mucklich, Appl. Phys. Lett. 86, 013108 (2005).
28. J. P. Biersack, Nucl. Instr. Meth. B 27, 21 (1987).
29. P. B. Johnson, Radiation Effects 32, 59 (1977).
30. P. B. Johnson, Fundamental Aspects of Inert Gases in Solids, edited by J. H. Evans and S. E. Donnelly, Plenum Press, New York (1991), p. 167.