Patterned growth of self-assembled silicon nanostructures by ion implantation and electron beam annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1459-1462

  Johnson, S ^a   Markwitz, A ^a,c   Rudolphi, M ^b   Baumann, H ^b  

^a GNS SCIENCE   (New Zealand)

^b GOETHE UNIVERSITY   (Germany)

^c MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURE GROWTH; SI SUBSTRATE; SURFACE DISORDER;

ANNEALING; ELECTRON BEAMS; ION IMPLANTATION; MICROSTRUCTURE; SELF ASSEMBLY; SILICON;

NANOSTRUCTURED MATERIALS;

EID: 31144479031     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1941189     Document Type: Review

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