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Volumn 4, Issue 2, 2011, Pages
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Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITIONAL FLUCTUATIONS;
NANO-METER-SCALE;
STRAIN DISTRIBUTIONS;
STRAIN FLUCTUATIONS;
STRAINED SURFACES;
STRAINED-SI;
SURFACE UNDULATION;
TIP-ENHANCED RAMAN SPECTROSCOPY;
ATOMIC FORCE MICROSCOPY;
ATOMIC SPECTROSCOPY;
EPITAXIAL GROWTH;
GERMANIUM;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SILICON;
STRAIN;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79951635387
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.4.025701 Document Type: Article |
Times cited : (21)
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References (17)
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