Calculation of integrated intensities in aberration-corrected Z-contrast images

Journal of Electron Microscopy

Volumn 60, Issue 1, 2011, Pages 29-33

  Molina, Sergio I ^a   Guerrero, Maria P ^b   Galindo, Pedro L ^b   Sales, David L ^a   Varela, Maria ^c   Pennycook, Stephen J ^c  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b s n   (Spain)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

aberration corrected; HAADF STEM; high angle annular dark field; image simulation; scanning transmission electron microscopy; Z contrast

Indexed keywords

ALLOY;

ARTICLE; CHEMISTRY; COMPUTER PROGRAM; COMPUTER SIMULATION; INSTRUMENTATION; METHODOLOGY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR;

ALLOYS; COMPUTER SIMULATION; MICROSCOPY, ELECTRON, SCANNING TRANSMISSION; SEMICONDUCTORS; SOFTWARE;

ARSENIC COMPOUNDS; GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ALLOYS; SCANNING ELECTRON MICROSCOPY; TERNARY ALLOYS;

ABERRATION-CORRECTED; ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; HAADF-STEM; HIGH-ANGLE ANNULAR DARK FIELDS; IMAGES SIMULATIONS; INTEGRATED INTENSITIES; QUANTITATIVE AGREEMENT; SCANNING TRANSMISSION ELECTRON MICROSCOPY; Z CONTRASTS; Z-CONTRAST IMAGES;

SEMICONDUCTOR ALLOYS;

EID: 79951612689     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfq078     Document Type: Article

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