Multi-channel magnetotransport in Co2FeSi(Al,Ga)As spin-LEDs

Solid State Communications

Volumn 151, Issue 6, 2011, Pages 436-439

  Farshchi, R ^a   Bruski, P ^a   Ramsteiner, M ^a   Herfort, J ^a   Brandt, O ^a   Manzke, Y ^a   Friedland, K J ^a   Grahn, H T ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A. Semiconductors; B. Epitaxy; C. Impurities in semiconductors; D. Electron transport

Indexed keywords

A. SEMICONDUCTORS; B. EPITAXY; C. IMPURITIES IN SEMICONDUCTORS; CARRIER DENSITY; D. ELECTRON TRANSPORT; FE IMPURITY; FERROMAGNETS; FIELD DEPENDENCIES; HALL EFFECT MEASUREMENT; HIGH TEMPERATURE; MAGNETOTRANSPORTS; MULTI-CHANNEL; N-TYPE DOPANTS; PARALLEL TRANSPORT; SCHOTTKY BARRIERS; SEMICONDUCTOR LAYERS; SEMICONDUCTOR STRUCTURE; SPIN INJECTION; SPIN LIGHT EMITTING DIODE; SPIN-INJECTION EFFICIENCY; TRANSPORT MODELS;

ALUMINUM; ELECTRIC RESISTANCE; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; LIGHT EMITTING DIODES; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR GROWTH;

EID: 79951517876     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.01.003     Document Type: Article

References (23)

1. H.J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H.-P. Schnherr, and K.H. Ploog Phys. Rev. Lett. 87 2001 016601
2. A.T. Hanbicki, B.T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou Appl. Phys. Lett. 80 2002 1240
3. V.F. Motsnyi, J. DeBoeck, J. Das, W.V. Roy, and G. Borghs Appl. Phys. Lett. 81 2002 265
4. X. Jiang, R. Wang, R.M. Shelby, R.M. Macfarlane, S.R. Bank, J.S. Harris, and S.S.P. Parkin Phys. Rev. Lett. 94 2005 056601
5. G. Salis, R. Wang, X. Jiang, R.M. Shelby, S.S. Parkin, S.R. Bank, and J.S. Harris Appl. Phys. Lett. 87 2005 262503
6. C. Adelmann, X. Lou, J. Strand, C.J. Palmstrøm, and P.A. Crowell Phys. Rev. B 71 2005 121301
7. X.Y. Dong, C. Adelmann, J.Q. Xie, C.J. Palmstrøm, X. Lou, J. Strand, P.A. Crowell, J.-P. Barnes, and A.K. Petford-Long Appl. Phys. Lett. 86 2005 102107
8. B. Balke, S. Wurmehl, G.H. Fecher, C. Felser, and J. Kübler Sci. Technol. Adv. Mater. 9 2008 014102
9. S. Bandyopadhyay, and M. Cahay Nanotechnology 20 2009 412001
10. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L.W. Molenkamp Nature (London) 402 1999 787
11. Y. Ohno, D.K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D.D. Awschalom Nature (London) 402 1999 790
12. M. Ramsteiner, O. Brandt, T. Flissikowski, H.T. Grahn, M. Hashimoto, J. Herfort, and H. Kostial Phys. Rev. B 78 2008 R121303
13. M. Hashimoto, A. Trampert, J. Herfort, and K.H. Ploog J. Vac. Sci. Technol. B 25 2007 1453
14. M. Hashimoto, J. Herfort, A. Trampert, H.-P. Schnherr, and K.H. Ploog J. Phys. D: Appl. Phys. 40 2007 1631
15. M. Hashimoto, J. Herfort, H.-P. Schnherr, and K.H. Ploog J. Appl. Phys. 98 2005 104902
16. C.L. Chien, and C.W. Westgate The Hall Effect and its Applications 1980 Plenum Press New York
17. H. Schneider, E. Vilanova1, B. Balke, C. Felser, and G. Jakob J. Phys. D: Appl. Phys. 42 2009 084012
18. C.M. Hurd The Hall Effect in Metals and Alloys 1972 Plenum Press New York
19. B. Raquet, M. Viret, P. Warin, E. Sondergard, and R. Mamy Physica B 294295 2001 102
20. K.W. Edmonds, R.P. Campion, K.-Y. Wang, A.C. Neumann, B.L. Gallagher, C.T. Foxon, and P.C. Main J. Appl. Phys. 93 2003 6787
21. C.D. Damsgaard, M.C. Hickey, S.N. Holmes, R. Feidenhans'l, S.O. Mariager, C.S. Jacobsen, and J.B. Hansen J. Appl. Phys. 105 2009 124502
22. O. Brandt, M. Ramsteiner, T. Flissikowski, J. Herfort, and H.T. Grahn Phys. Rev. B 81 2010 115302
23. E.I. Rashba Phys. Rev. B 62 2000 R16267