Atomic ordering and interlayer diffusion of Co2 FeSi films grown on GaAs(001) studied by transmission electron microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1453-1459

  Hashimoto, M ^a   Trampert, A ^a   Herfort, J ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; FILM GROWTH; GALLIUM COMPOUNDS; GROWTH TEMPERATURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC ORDERING; HEUSLER ALLOYS; INTERLAYER DIFFUSION; PHASE COEXISTENCE;

THIN FILMS;

EID: 34547594259     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2748413     Document Type: Article

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