Magnetoresistance and Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs

Journal of Applied Physics

Volumn 93, Issue 10 2, 2003, Pages 6787-6789

  Edmonds, K W ^a   Campion, R P ^a   Wang, K Y ^a   Neumann, A C ^a   Gallagher, B L ^a   Foxon, C T ^a   Main, P C ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; SEMICONDUCTING GALLIUM COMPOUNDS;

HALL RESISTANCE;

THIN FILMS;

EID: 0038653441     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1556110     Document Type: Conference Paper

References (7)

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3. L. Berger and G. Bergmann, in The Hall Effect and its Applications, edited by C. L. Chien and C. R. Westgate (Plenum, New York, 1979).
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6. R P. Campion, K. W. Edmonds, L. X. Zhao, K. Y. Wang, C. T. Foxon, B. L. Gallagher, and C. R. Staddon, J. Cryst. Growth 247, 42 (2003).
7. Y. Iye, A. Oiwa, A. Endo, S. Katsumoto, F. Matsukura, A. Shen, H. Ohno, and H. Munekata, Mater. Sci. Eng., B 63, 88 (1999).