Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge)

Science and Technology of Advanced Materials

Volumn 9, Issue 1, 2008, Pages

  Balke, Benjamin ^a   Wurmehl, Sabine ^a   Fecher, Gerhard H ^a   Felser, Claudia ^a   Kübler, Jürgen ^b  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Electronic structure; Half metallic ferromagnets; Heusler compounds; Intermetallics

Indexed keywords

ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; CURIE TEMPERATURE; ELECTROMAGNETISM; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC MATERIALS; MAGNETISM; METALS; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS;

COMPUTATIONAL SIMULATIONS; CONDUCTION ELECTRONS; CURIE TEMPERATURES; ELECTRONIC STRUCTURE; FERROMAGNETIC SEMICONDUCTORS; HALF-METALLIC FERROMAGNETS; HALF-METALS; HEUSLER COMPOUNDS; HIGH CURIE TEMPERATURES; HIGH SPIN POLARIZATION; INTERMETALLICS; MAGNETIC TUNNEL JUNCTIONS; MATERIAL DESIGNS; MATERIAL SCIENTISTS; MULTIDISCIPLINARY FIELD; NEW DEVELOPMENTS; NEW MATERIALS; RATIONAL DESIGN; RESEARCH AREA; ROOM TEMPERATURES; SOLID STATES; SPINTRONIC; SPINTRONIC APPLICATIONS; SPINTRONICS;

TUNNEL JUNCTIONS;

EID: 49049088321     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1088/1468-6996/9/1/014102     Document Type: Conference Paper

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