Tunneling emission from self-organized In(Ga)As GaAs quantum dots observed via time-resolved capacitance measurements

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 20, 2006, Pages

  Geller, M ^a   Stock, E ^a   Kapteyn, C ^a   Sellin, R L ^a,b   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646724078     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.205331     Document Type: Article

References (42)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1998).
2. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.92959 40, 939 (1982).
3. N. Kirstaedter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop'ev, Z. I. Alferov, U. Richter, Electron. Lett. ELLEAK 0013-5194 10.1049/el:19940939 30, 1416 (1994).
4. F. Heinrichsdorff, C. Ribbat, M. Grundmann, and D. Bimberg, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125816 76, 556 (2000).
5. M. Kuntz, G. Fiol, M. Lämmlin, D. Bimberg, M. G. Thompson, K. T. Tan, C. Marinelli, R. V. Penty, I. H. White, V. M. Ustinov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1776340 85, 843 (2004).
6. P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, L. Zhang, E. Hu, and A. Imamoǧlu, Science SCIEAS 0036-8075 10.1126/science.290.5500.2282 290, 2282 (2000).
7. C. Santori, D. Fattal, J. Vučković, G. S. Solomon, and Y. Yamamoto, Nature (London) NATUAS 0028-0836 10.1038/nature01086 419, 594 (2002).
8. J. C. Campbell, D. L. Huffaker, H. Deng, and D. G. Deppe, Electron. Lett. ELLEAK 0013-5194 10.1049/el:19970906 33, 1337 (1997).
9. L. Chu, A. Zrenner, M. Bichler, and G. Abstreiter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1408269 79, 2249 (2001).
10. S. Muto, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.34.2101 34, 210 (1995).
11. S. M. Sze, in Future Trends in Microelectronics, edited by, S. Luryi,,, J. Xu,, and, A. Zaslavsky, (Wiley, New York, 1999), p. 291.
12. T. Lundstrom, W. Schoenfeld, H. Lee, and P. M. Petroff, Science SCIEAS 0036-8075 10.1126/science.286.5448.2312 286, 2312 (1999).
13. H. Pettersson, L. Baath, N. Carlson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1382628 79, 78 (2001).
14. M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, and J. J. Finley, Nature (London) NATUAS 0028-0836 10.1038/nature03008 432, 81 (2004).
15. O. Stier, M. Grundmann, and D. Bimberg, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.5688 59, 5688 (1999).
16. C. T. Sah, L. Forbes, L. L. Rosier, and A. F. Tasch, Jr., Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(70)90064-X 13, 759 (1970).
17. D. V. Lang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1663719 45, 3023 (1974).
18. S. Anand, N. Carlsson, M.-E. Pistol, L. Samuelson, and W. Seifert, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114937 67, 3016 (1995).
19. C. M. A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N. D. Zakharov, D. Bimberg, and P. Werner, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.60.14265 60, 14265 (1999).
20. C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. N. Brunkov, B. V. Volovik, S. G. Konnikov, A. R. Kovsh, and V. M. Ustinov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126099 76, 1573 (2000).
21. C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, and G. Abstreiter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1334651 77, 4169 (2000).
22. M. Geller, C. Kapteyn, L. Müller-Kirsch, R. Heitz, and D. Bimberg, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1569413 82, 2706 (2003).
23. O. Engström, M. Malmkvist, Y. Fu, H. O. Olafsson, and E. O. Sveinbjörnsson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1622437 83, 3578 (2003).
24. S. Schulz, S. Schnüll, C. Heyn, and W. Hansen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.195317 69, 195317 (2004).
25. W. H. Chang, W. Y. Chen, T. M. Hsu, N. T. Yeh, and J. I. Chyi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.195337 66, 195337 (2002).
26. F. Guffarth, R. Heitz, A. Schliwa, O. Stier, M. Geller, C. M. A. Kapteyn, R. Sellin, and D. Bimberg, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67. 235304 67, 235304 (2003).
27. I. Mukhametzhanov, R. Heitz, J. Zeng, P. Chen, and A. Madhukar, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122300 73, 1841 (1998).
28. F. Heinrichsdorff, MOCVD Growth and Laser Applications of In(Ga)As GaAs Quantum Dots (Mensch & Buch, Berlin, 1998) [Dissertation, Technische Universität Berlin].
29. R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.R10151 58, R10151 (1998).
30. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic Press, London, 1992).
31. S. M. Sze, Semiconductor Devices-Physics and Technology (Wiley, New York, 1985).
32. P. Omling, L. Samuelson, and H. G. Grimmeis, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.332733 54, 5117 (1983).
33. H. Scher, M. F. Shlesinger, and J. T. Bendler, Phys. Today PHTOAD 0031-9228 26, 26 (1991).
34. J. Frenkel, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.54.647 54, 647 (1938).
35. S. Anand, N. Carlsson, M.-E. Pistol, L. Samuelson, and W. Seifert, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368553 84, 3747 (1998).
36. P. W. Fry, J. J. Finley, L. R. Wilson, A. Lemaître, D. J. Mowbray, and M. S. Skolnick, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1334363 77, 4344 (2000).
37. D. M.-T. Kuo and Y.-C. Chang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.11051 61, 11051 (2000).
38. Gallium Arsenide (GaAs), Valence Bands, Effective Masses, Landolt-Börnstein, Group III Condensed Matter, Vol. 41/A1A (Springer, Berlin, 2001).
39. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1368156 89, 5815 (2001).
40. Gallium Arsenide (GaAs), Conduction Band, Effective Masses and Related Parameters, Landolt-Börnstein, Group III Condensed Matter, Vol. 41/A1A (Springer, Berlin, 2001).
41. The effective mass of the GaAs barrier is slightly reduced, due to the seed layer below the QDs in sample E1. A simple estimation of the fraction of InAs in the GaAs barrier leads to a reduction of the effective mass to approximately me* ≈0.058, an uncertainty of about 9%. However, the total accuracy of the tunneling barrier height-including the linearization uncertainty-is only 5%, due to the error propagation theorem.
42. If we assume a very poor accuracy of the Poole-Frenkel energy of about 50%, due to the limited knowledge of the QD height, the total accuracy of the localization energy is better than 8%.