Design and characterization of the immersion-type capacitive ultrasonic sensors fabricated in a CMOS process

Journal of Micromechanics and Microengineering

Volumn 21, Issue 2, 2011, Pages

  Tang, Po Kai ^a   Wang, Po Hsun ^a   Li, Meng Lin ^a   Lu, Michael S C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING VOLTAGES; CAPACITANCE VALUES; CAPACITIVE SENSOR; CMOS PROCESSS; DETECTION CIRCUITS; FRACTIONAL BANDWIDTHS; METAL ETCH; MICROMACHINED; NOISE PRESSURE; PARYLENES; POST-CMOS; RESONANT FREQUENCIES; SENSING ELECTRODE; SENSING MEMBRANES; SILICON DIOXIDE; TRAPPED CHARGE; TWO-DIMENSIONAL ARRAYS; ULTRASOUND DETECTION;

CMOS INTEGRATED CIRCUITS; ELECTRODES; NATURAL FREQUENCIES; SENSORS; SILICA; ULTRASONICS;

ULTRASONIC APPLICATIONS;

EID: 79551706516     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/2/025013     Document Type: Article

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