SCOPUS 정보 검색 플랫폼

Volumn 315, Issue 1, 2011, Pages 1-4

In situ curvature monitoring for metalorganic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells

(4) Sugiyama, Masakazu a Sugita, Kenichi b Wang, Yunpeng b Nakano, Yoshiaki a,b

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Gallium compounds; B3. Solar cells

Indexed keywords

A1. CHARACTERIZATION; A3. QUANTUM WELLS; B1. GALLIUM COMPOUNDS; B3.SOLAR CELL; METAL-ORGANIC VAPOR PHASE EPITAXY;

EPITAXIAL GROWTH; GALLIUM; GALLIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MONITORING; QUANTUM CASCADE LASERS; SOLAR CELLS; VAPORS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79551688642 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.09.070 Document Type: Article

Times cited : (29)

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