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Applied Physics A: Materials Science and Processing

Volumn 102, Issue 1, 2011, Pages 161-168

Erratum: Interpretation of transport measurements in ZnO-thin films (Appl Phys A (DOI: 10.1007/s00339-010-5945-0);Interpretation of transport measurements in ZnO-thin films

(5) Petukhov, Vladimir a Stoemenos, John a Rothman, Johan a Bakin, Andrey a Waag, Andreas a

a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; FILM PREPARATION; HALL MOBILITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNESIA; MAXIMUM ENTROPY METHODS; METALLIC FILMS; MULTILAYER FILMS; OPTICAL FILMS; SAPPHIRE; SPECTRUM ANALYSIS; TEMPERATURE DISTRIBUTION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

CONDUCTIVITY MODELS; DEGENERATE ELECTRON GAS; HALL MEASUREMENTS; INTERFACIAL LAYER; MOBILITY SPECTRUM ANALYSIS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TRANSPORT MEASUREMENTS;

II-VI SEMICONDUCTORS;

EID: 79551682169 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6124-z Document Type: Erratum

Times cited : (3)

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