SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 2, 2011, Pages

An electrode-free method of characterizing the microwave dielectric properties of high-permittivity thin films

(10) Bovtun, V a Pashkov, V b Kempa, M a Kamba, S a Eremenko, A b Molchanov, V b Poplavko, Y b Yakymenko, Y b Lee, J H c Schlom, D G c

a INSTITUTE OF PHYSICS (Czech Republic)

b NATIONAL TECHNICAL UNIVERSITY OF UKRAINE (Ukraine)

c School of Operations Research and Industrial Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL COMPRESSION; BIAXIAL TENSIONS; DIELECTRIC PARAMETERS; DIELECTRIC PERMITTIVITIES; DIELECTRIC SUBSTRATES; DOMAIN WALL MOTION; HIGH SENSITIVITY; IN-PLANE; INDUCED FERROELECTRIC PHASE; LOW LOSS; LOW TEMPERATURES; MICROWAVE CHARACTERIZATION; MICROWAVE DIELECTRIC PROPERTIES; MICROWAVE PERMITTIVITY; RESONANCE MODE; SUBSTRATE THICKNESS; ULTRA-THIN;

DIELECTRIC RESONATORS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; FERROELECTRICITY; FILM THICKNESS; MICROWAVE DEVICES; MICROWAVES; PERMITTIVITY; PHASE TRANSITIONS; THIN FILMS;

SUBSTRATES;

EID: 79551671451 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3537835 Document Type: Article

Times cited : (30)

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