Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Hwang, J S ^a   Gokarna, A ^a   Cho, Yong Hoon ^a   Son, J K ^b   Lee, S N ^b   Sakong, T ^b   Paek, H S ^b   Nam, O H ^b   Park, Y ^b   Park, S H ^c  

^a Chungbuk National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Catholic University of Daegu   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GALLIUM NITRIDE; OPTICAL PROPERTIES; PIEZOELECTRICITY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

OPTICAL ANALYSIS; RADIATIVE LIFETIMES; STOKES-LIKE SHIFT; THERMAL ACTIVATION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547213822     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749281     Document Type: Article

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