Characteristics of SrTiO3 field-effect transistors with DyScO3 gate insulators

Japanese Journal of Applied Physics

Volumn 49, Issue 12, 2010, Pages

  Nishio, Kazunori ^a   Abe, Takuya ^a   Takahashi, Ryota ^a   Lippmaa, Mikk ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BREAKDOWN CHARACTERISTICS; CHANNEL INTERFACE; CHARGED TRAPS; EPITAXIAL INTERFACES; GATE INSULATOR; LOWER PRESSURES; OFF-STATE CURRENT; ON/OFF RATIO; OXYGEN AMBIENT PRESSURE; POST ANNEALING; SRTIO; TOP-GATE; TRANSISTOR CHANNELS; WIDE-GAP OXIDES; ZERO-BIAS;

EPITAXIAL GROWTH; MESFET DEVICES; OXYGEN; STRONTIUM ALLOYS;

FIELD EFFECT TRANSISTORS;

EID: 79551620852     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.125701     Document Type: Article

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