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Physical Review Letters

Volumn 103, Issue 22, 2009, Pages

Dominant mobility modulation by the electric field effect at the laAlO3/SrTiO3 interface

(7) Bell, C a,b Harashima, S a Kozuka, Y a Kim, M a Kim, B G a,c Hikita, Y a Hwang, H Y a,b

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c Pusan National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; DISORDER STRENGTH; GATED STRUCTURES; MAGNETOTRANSPORTS; MOBILITY MODULATION; MOBILITY VARIATION; NEGATIVE GATE; SHEET CARRIER DENSITIES; SUPERCONDUCTOR INSULATOR TRANSITIONS;

ELECTRIC FIELD EFFECTS; SUPERCONDUCTIVITY;

CARRIER MOBILITY;

EID: 72649102097 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.103.226802 Document Type: Article

Times cited : (283)

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