Electron doping into the surface of SrTiO3 single crystal by using a field effect transistor structure having a polyvinyl alcohol gate insulator layer

Thin Solid Films

Volumn 517, Issue 18, 2009, Pages 5502-5507

  Sakai, M ^a   Seo, K ^a   Ohkawa, Y ^a   Okuda, T ^a,b  

^a KAGOSHIMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Electric double layer; Field effect transistor; Polyvinyl alcohol; SrTiO3

Indexed keywords

CONDUCTING CHANNELS; DRIVING VOLTAGES; ELECTRIC DOUBLE LAYER; ELECTRON-DOPING; FIELD EFFECT TRANSISTOR STRUCTURES; GATE INSULATOR; GATE INSULATOR LAYERS; GATE VOLTAGES; N-CHANNEL; RESPONSE TIME; SECOND ORDERS; SEMICONDUCTING BEHAVIOR; SRTIO; SRTIO3;

CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTROCHEMISTRY; MESFET DEVICES; SINGLE CRYSTALS; STRONTIUM ALLOYS;

FIELD EFFECT TRANSISTORS;

EID: 65649140012     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.04.016     Document Type: Article

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