Path to achieve sub-10-nm half-pitch using electron beam lithography

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages 0110351-0110357

  Tavakkoli, A K G ^a,b   Piramanayagam, S N ^a   Ranjbar, M ^a,b   Sbiaa, R ^a   Chong, T C ^a,b  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; VACUUM APPLICATIONS;

CAPILLARY FORCE; DENSE ARRAYS; DENSE PATTERNS; HALF PITCHES; HYDROGEN SILSESQUIOXANE; NANO-METER SCALE; RESIST THICKNESS;

ELECTRON BEAM LITHOGRAPHY;

EID: 79551618576     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3532938     Document Type: Conference Paper

References (16)

1. S. N. Piramanayagam and K. Srinivasan, J. Magn. Magn. Mater. 0304-8853 321, 485 (2009). 10.1016/j.jmmm.2008.05.007
2. J. Thiele, S. Maat, and E. E. Fullerton, Appl. Phys. Lett. 0003-6951 82, 2859 (2003). 10.1063/1.1571232
3. B. Terris, T. Thomson, and G. Hu, Microsyst. Technol. 0946-7076 13, 189 (2007). 10.1007/s00542-006-0144-9 (Pubitemid 44770912)
4. R. Sbiaa and S. N. Piramanayagam, Recent Pat. Nanotechnol. 1872-2105 1, 29 (2007). 10.2174/187221007779814754
5. R. Sbiaa, E. L. Tan, R. M. Seoh, K. O. Aung, S. K. Wong, and S. N. Piramanayagam, J. Vac. Sci. Technol. B 1071-1023 26, 1666 (2008). 10.1116/1.2966426
6. X. M. Yang, S. Xiao, W. Wu, Y. Xu, K. Mountfield, R. Rottmayer, K. Lee, D. Kuo, and D. Weller, J. Vac. Sci. Technol. B 1071-1023 25, 2202 (2007). 10.1116/1.2798711 (Pubitemid 350258477)
7. H. S. Lee, J. S. Wi, S. W. Nam, H. M. Kim, and K. B. Kim, J. Vac. Sci. Technol. B 1071-1023 27, 188 (2009). 10.1116/1.3049482
8. J. K. W. Yang and K. K. Berggren, J. Vac. Sci. Technol. B 1071-1023 25, 2025 (2007). 10.1116/1.2801881 (Pubitemid 350255831)
9. S. Choi, M. Yan, L. Wang, and I. Adesida, Microelectron. Eng. 0167-9317 86, 521 (2009). 10.1016/j.mee.2008.12.055
10. A. Grigorescu and C. Hagen, Nanotechnology 0957-4484 20, 292001 (2009). 10.1088/0957-4484/20/29/292001
11. T. Tanaka and M. M. A. N. Atoda, Jpn. J. Appl. Phys., Part 1 0021-4922 32, 6059 (1993). 10.1143/JJAP.32.6059
12. H. Namatsu, K. Kurihara, M. Nagase, K. Iwadate, and K. Murase, Appl. Phys. Lett. 0003-6951 66, 2655 (1995). 10.1063/1.113115
13. S. Lis, R. Dylewicz, J. Myśliwiec, A. Miniewicz, and S. Patela, Mater. Sci. (Poland) 0137-1339 26, 189 (2008).
14. V. Sidorkin, A. Grigorescu, H. Salemink, and E. Drift, Microelectron. Eng. 0167-9317 86, 749 (2009). 10.1016/j.mee.2008.12.071
15. J. Yang, B. Cord, H. Duan, K. Berggren, J. Klingfus, S. -W. Nam, K. Kim, and M. Rooks, J. Vac. Sci. Technol. B 1071-1023 27, 2622 (2009). 10.1116/1.3253652
16. D. Morecroft, J. K. W. Yang, S. Schuster, K. K. Berggren, Q. Xia, W. Wu, and R. S. Williams, J. Vac. Sci. Technol. B 1071-1023 27, 2837 (2009). 10.1116/1.3264670