Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics

IEEE Transactions on Device and Materials Reliability

Volumn 10, Issue 4, 2010, Pages 437-448

  Cressler, John D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Cryogenic temperatures; extreme environment electronics; high temperatures; radiation effects; SiGe heterojunction bipolar transistor (HBT); silicon germanium (SiGe); space electronics

Indexed keywords

CRYOGENIC TEMPERATURES; EXTREME ENVIRONMENT ELECTRONICS; HIGH TEMPERATURES; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; SILICON-GERMANIUM (SIGE); SPACE ELECTRONICS;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CRYOGENICS; EARTH (PLANET); ECOLOGY; ELECTRONIC EQUIPMENT; ELECTRONICS INDUSTRY; GERMANIUM; HETEROJUNCTIONS; RADIATION EFFECTS; SILICON ALLOYS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 79551538299     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2050691     Document Type: Article

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