Optimisation of AlInN/GaN HEMT structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2041-2043

  Khoshroo, L Rahimzadeh ^a   Mauder, C ^a   Zhang, W ^a   Fieger, M ^a   Eickelkamp, M ^a   Dikme, Y ^b   Woitok, J ^c   Niyamakom, P ^a   Vescan, A ^a   Kalisch, H ^a   Heuken, M ^a,b   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

^c MALVERN INSTRUMENTS LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; CHARACTERISATION; CHARGE CARRIER DENSITY; EXTRINSIC TRANSCONDUCTANCE; GAN/SAPPHIRE; HETERO INTERFACES; HETEROSTRUCTURES; HIGH RESOLUTION X RAY DIFFRACTION; HRXRD; LAYER THICKNESS; MAXIMUM DRAIN CURRENT; MEASURED DATA; OPTIMISATIONS; RECIPROCAL SPACE MAPS; ROCKING CURVES; ROOM TEMPERATURE; SOURCE-DRAIN; THICK LAYERS; XRD;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTOR GROWTH; SPINODAL DECOMPOSITION; STRUCTURAL OPTIMIZATION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77951221786     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778739     Document Type: Conference Paper

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