Effects of accelerated annealing on p-type silicon micro-strip detectors after very high doses of proton irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 568, Issue 1, 2006, Pages 46-50

  Casse, G ^a   Allport, P P ^a   Watson, A ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Charge collection efficiency; Radiation hardness; Silicon micro strip

Indexed keywords

ANNEALING; ELECTRIC CHARGE; HARDNESS; MICROSTRIP DEVICES; PROTON IRRADIATION; RADIATION HARDENING; SPURIOUS SIGNAL NOISE;

CHARGE COLLECTION EFFICIENCY; DEPLETION VOLTAGE; IRRADIATED DETECTORS; RADIATION HARDNESS;

SILICON SENSORS;

EID: 33750345295     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.200     Document Type: Article

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