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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 89-92

Chloride-based SiC epitaxial growth

(6) Pedersen, H a Leone, S a,b Henry, A a Beyer, F C a Lundskog, A a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

b Caracal Inc (United States)

Author keywords

Chloride based CVD growth; Epilayers; High growth rate

Indexed keywords

CHLORINE COMPOUNDS; EPILAYERS; SILICON CARBIDE;

CHLORIDE-BASED CVD; DIFFERENT PRECURSORS; HIGH GROWTH RATE; METHYLTRICHLOROSILANE; PROCESS PARAMETERS; RATE STABILITY; SINGLE-MOLECULE PRECURSORS;

GROWTH RATE;

EID: 79251543338 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.89 Document Type: Conference Paper

Times cited : (1)

References (9)

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- Defects in 4H-SiC Layers Grown by Chloridebased Epitaxy
- Beyer, F.C.¹ Pedersen, H.² Henry, A.³ Janzén, E.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.