Improvements in the device characteristics of random-network single-walled carbon nanotube transistors by using high- κ gate insulators

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Ohishi, Megumi ^a   Shiraishi, Masashi ^a   Ochi, Kenji ^b,c   Kubozono, Yoshihiro ^b,c   Kataura, Hiromichi ^d  

^a OSAKA UNIVERSITY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; HYSTERESIS; SOL-GELS; SWITCHING FUNCTIONS; TRANSCONDUCTANCE;

GATE INSULATORS; SINGLE-WALLED CARBON NANOTUBES; SOL-GEL METHODS; SURFACE CONDITIONS;

CARBON NANOTUBES;

EID: 33751107943     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2388150     Document Type: Article

References (21)

1. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
2. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
3. T. Dürkop, S. A. Getty, Enrique Cobas, and M. S. Fuhrer, Nano Lett. 4, 35 (2004).
4. E. S. Snow, J. P. Novak, P. M. Campbell, and D. Park, Appl. Phys. Lett. 82, 2145 (2003).
5. M. Shiraishi, T. Takenobu, T. Iwai, Y. Iwasa, H. Kataura, and M. Ata, Chem. Phys. Lett. 394, 110 (2004).
6. K. Xiao, Y. Q. Liu, P. A. Hu, G. Yu, X. B. Wang, and D. B. Zhu, Appl. Phys. Lett. 83, 150 (2003).
7. M. Meitl, Y. Zhou, A. Gaur, S. Jeon, M. Usrey, M. Strano, and J. Rogers, Nano Lett. 4, 1643 (2004).
8. M. Shiraishi, S. Nakamura, T. Fukao, T. Takenobu, H. Kataura, and Y. Iwasa, Appl. Phys. Lett. 87, 093107 (2005).
9. S. Nakamura, M. Ohishi, T. Takenobu, Y. Iwasa, H. Kataura, and M. Shiraishi, Appl. Phys. Lett. 89, 013112 (2006).
10. T. Fukao, S. Nakamura, H. Kataura, and M. Shiraishi, Jpn. J. Appl. Phys., Part 1 45, 6524 (2006).
11. Introducing Molecular Electronics, edited by G. Cuniberti, G. Fagas, and K. Richter (Springer, New York, 2005).
12. T. Takenobu, T. Takahashi, T. Kanbara, K. Tsukagoshi, Y. Aoyagi, and Y. Iwasa, Appl. Phys. Lett. 88, 033511 (2006).
13. Y. Kubozono, T. Nagano, Y. Haruyama, E. Kuwahara, T. Takayanagi, and K. Ochi, Appl. Phys. Lett. 87, 143506 (2005).
14. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
15. C. D. Dimitrakopoulos, I. Kymissis, S. Purushothaman, D. A. Neumayer, P. R. Duncombe, and R. B. Laibowitz, Adv. Mater. (Weinheim, Ger.) 11, 1372 (1999).
16. A. Javey, J. Guo, B. F. Damon, Q. Wang, D. Wang, R. G. Gordon, M. Lundstrom, and H. J. Dai, Nano Lett. 4, 447 (2004).
17. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. J. Dai, Nat. Mater. 1, 241 (2002).
18. G. Wang, D. Moses, A. J. Heeger, H. M. Zhang, M. Narasimhan, and R. E. Demaray, J. Appl. Phys. 95, 316 (2004).
19. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. J. Dai, Nano Lett. 3, 193 (2002).
20. P. G. Collins, M. S. Arnold, and Ph. Avouris, Science 292, 706 (2001).
21. S. M. Sze, Semiconductor Devices (Wiley, New York, 1981).