SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

Microwave circuit model of the three-port transistor laser

(3) Then, H W a Feng, M a Holonyak Jr , N a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

40 GB/S; CHARGE CONTROL; CIRCUIT MODELS; CURRENT DRIVING; DEVICE PARAMETERS; DEVICE PHYSICS; DIRECTLY MODULATED; ELECTRON-HOLE RECOMBINATION; ELECTRON-PHOTON INTERACTIONS; EYE-DIAGRAM; INTRINSIC DEVICE; KIRCHHOFF'S LAWS; LOW DENSITY; MODEL YIELDS; OPTICAL COMMUNICATION LINKS; PARASITIC ELEMENT; PHYSICAL QUANTITIES; QUANTUM WELL; QUASI-FERMI LEVEL; S -PARAMETERS; TRANSISTOR LASERS;

MICROWAVE CIRCUITS; MICROWAVE DEVICES; OPTICAL INSTRUMENTS; SCATTERING PARAMETERS;

OPTICAL COMMUNICATION;

EID: 79251506324 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3371802 Document Type: Article

Times cited : (52)

References (26)

1
- 84937350085
- PIREAE 0096-8390,. 10.1109/JRPROC.1954.274797
- J. J. Ebers and J. L. Moll, Proc. IRE PIREAE 0096-8390 42, 1761 (1954). 10.1109/JRPROC.1954.274797
- (1954) Proc. IRE , vol.42 , pp. 1761
- Ebers, J.J.¹ Moll, J.L.²

2
- 36149010714
- PRVAAH 0096-8250,. 10.1103/PhysRev.74.230
- J. Bardeen and W. H. Brattain, Phys. Rev. PRVAAH 0096-8250 74, 230 (1948). 10.1103/PhysRev.74.230
- (1948) Phys. Rev. , vol.74 , pp. 230
- Bardeen, J.¹ Brattain, W.H.²

3
- 0942278263
- APPLAB 0003-6951,. 10.1063/1.1637950
- M. Feng, N. Holonyak, Jr., and W. Hafez, Appl. Phys. Lett. APPLAB 0003-6951 84, 151 (2004). 10.1063/1.1637950
- (2004) Appl. Phys. Lett. , vol.84 , pp. 151
- Feng, M.¹ Holonyak Jr., N.² Hafez, W.³

4
- 1842637201
- APPLAB 0003-6951,. 10.1063/1.1669071
- M. Feng, N. Holonyak, Jr., and R. Chan, Appl. Phys. Lett. APPLAB 0003-6951 84, 1952 (2004). 10.1063/1.1669071
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1952
- Feng, M.¹ Holonyak Jr., N.² Chan, R.³

5
- 10944222730
- Laser operation of a heterojunction bipolar light-emitting transistor
- DOI 10.1063/1.1818331
- G. Walter, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. Phys. Lett. APPLAB 0003-6951 85, 4768 (2004). 10.1063/1.1818331 (Pubitemid 40009686)
- (2004) Applied Physics Letters , vol.85 , Issue.20 , pp. 4768-4770
- Walter, G.¹ Holonyak Jr., N.² Feng, M.³ Chan, R.⁴

6
- 28344450208
- Room temperature continuous wave operation of a heterojunction bipolar transistor laser
- DOI 10.1063/1.2058213, 131103
- M. Feng, N. Holonyak, Jr., G. Walter, and R. Chan, Appl. Phys. Lett. APPLAB 0003-6951 87, 131103 (2005). 10.1063/1.2058213 (Pubitemid 41717268)
- (2005) Applied Physics Letters , vol.87 , Issue.13 , pp. 1-3
- Feng, M.¹ Holonyak Jr., N.² Walter, G.³ Chan, R.⁴

7
- 17644390226
- Microwave operation and modulation of a transistor laser
- DOI 10.1063/1.1889243, 131114
- R. Chan, M. Feng, N. Holonyak, Jr., and G. Walter, Appl. Phys. Lett. APPLAB 0003-6951 86, 131114 (2005). 10.1063/1.1889243 (Pubitemid 40564871)
- (2005) Applied Physics Letters , vol.86 , Issue.13 , pp. 1-3
- Chan, R.¹ Feng, M.² Holonyak, N.³ Walter, G.⁴

8
- 32444445737
- Signal mixing in a multiple input transistor laser near threshold
- DOI 10.1063/1.2171834
- M. Feng, N. Holonyak, Jr., R. Chan, A. James, and G. Walter, Appl. Phys. Lett. APPLAB 0003-6951 88, 063509 (2006). 10.1063/1.2171834 (Pubitemid 43228552)
- (2006) Applied Physics Letters , vol.88 , Issue.6 , pp. 063509
- Feng, M.¹ Holonyak Jr., N.² Chan, R.³ James, A.⁴ Walter, G.⁵

9
- 59349116495
- APPLAB 0003-6951,. 10.1063/1.3077020
- M. Feng, N. Holonyak, Jr., H. W. Then, C. H. Wu, and G. Walter, Appl. Phys. Lett. APPLAB 0003-6951 94, 041118 (2009). 10.1063/1.3077020
- (2009) Appl. Phys. Lett. , vol.94 , pp. 041118
- Feng, M.¹ Holonyak Jr., N.² Then, H.W.³ Wu, C.H.⁴ Walter, G.⁵

10
- 62549115371
- APPLAB 0003-6951,. 10.1063/1.3100294
- H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. APPLAB 0003-6951 94, 101114 (2009). 10.1063/1.3100294
- (2009) Appl. Phys. Lett. , vol.94 , pp. 101114
- Then, H.W.¹ Wu, C.H.² Walter, G.³ Feng, M.⁴ Holonyak Jr., N.⁵

11
- 34247233272
- Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser
- DOI 10.1063/1.2721364
- A. James, G. Walter, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. APPLAB 0003-6951 90, 152109 (2007). 10.1063/1.2721364 (Pubitemid 46609853)
- (2007) Applied Physics Letters , vol.90 , Issue.15 , pp. 152109
- James, A.¹ Walter, G.² Feng, M.³ Holonyak Jr., N.⁴

12
- 34249747402
- Franz-Keldysh photon-assisted voltage-operated switching of a transistor laser
- DOI 10.1109/LPT.2007.895049
- A. James, N. Holonyak, Jr., M. Feng, and G. Walter, IEEE Photon. Technol. Lett. IPTLEL 1041-1135 19, 680 (2007). 10.1109/LPT.2007.895049 (Pubitemid 46822988)
- (2007) IEEE Photonics Technology Letters , vol.19 , Issue.9 , pp. 680-682
- James, A.¹ Holonyak, N.² Feng, M.³ Walter, G.⁴

13
- 0003514380
- (Cambridge University Press, New York),.
- Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, New York, 2009), p. 380.
- (2009) Fundamentals of Modern VLSI Devices , pp. 380
- Taur, Y.¹ Ning, T.H.²

14
- 34547659169
- Charge control analysis of transistor laser operation
- DOI 10.1063/1.2767172
- M. Feng, N. Holonyak, Jr., H. W. Then, and G. Walter, Appl. Phys. Lett. APPLAB 0003-6951 91, 053501 (2007). 10.1063/1.2767172 (Pubitemid 47210856)
- (2007) Applied Physics Letters , vol.91 , Issue.5 , pp. 053501
- Feng, M.¹ Holonyak Jr., N.² Then, H.W.³ Walter, G.⁴

15
- 0007301047
- in, edited by C. H. Townes (Columbia University Press, New York),.
- H. Statz and G. de Mars, in Quantum Electronics, edited by, C. H. Townes, (Columbia University Press, New York, 1960), p. 650.
- (1960) Quantum Electronics , pp. 650
- Statz, H.¹ De Mars, G.²

16
- 0019623917
- IEEPAD 0018-9219.
- R. S. Tucker, Proc. IEEE IEEPAD 0018-9219 128, 180 (1981).
- (1981) Proc. IEEE , vol.128 , pp. 180
- Tucker, R.S.¹

17
- 33748677500
- Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser
- DOI 10.1063/1.2346369
- M. Feng, N. Holonyak, Jr., A. James, K. Cimino, G. Walter, and R. Chan, Appl. Phys. Lett. APPLAB 0003-6951 89, 113504 (2006). 10.1063/1.2346369 (Pubitemid 44396647)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 113504
- Feng, M.¹ Holonyak Jr., N.² James, A.³ Cimino, K.⁴ Walter, G.⁵ Chan, R.⁶

18
- 67651248095
- APPLAB 0003-6951,. 10.1063/1.3184580
- M. Feng, H. W. Then, N. Holonyak, Jr., G. Walter, and A. James, Appl. Phys. Lett. APPLAB 0003-6951 95, 033509 (2009). 10.1063/1.3184580
- (2009) Appl. Phys. Lett. , vol.95 , pp. 033509
- Feng, M.¹ Then, H.W.² Holonyak Jr., N.³ Walter, G.⁴ James, A.⁵

19
- 0004071496
- (Wiley, Hoboken, New Jersey)
- D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, Hoboken, New Jersey, 2006), pp. 147-187.
- (2006) Semiconductor Material and Device Characterization , pp. 147-187
- Schroder, D.K.¹

20
- 0003554759
- (Artech House, Norwood, Massachusetts),.
- S. A. Wartenberg, RF Measurements of Die and Packages (Artech House, Norwood, Massachusetts, 2002), p. 124.
- (2002) RF Measurements of Die and Packages , pp. 124
- Wartenberg, S.A.¹

21
- 65449139928
- APPLAB 0003-6951,. 10.1063/1.3126642
- C. H. Wu, G. Walter, H. W. Then, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. APPLAB 0003-6951 94, 171101 (2009). 10.1063/1.3126642
- (2009) Appl. Phys. Lett. , vol.94 , pp. 171101
- Wu, C.H.¹ Walter, G.² Then, H.W.³ Feng, M.⁴ Holonyak Jr., N.⁵

22
- 67649094334
- APPLAB 0003-6951,. 10.1063/1.3154565
- G. Walter, C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. APPLAB 0003-6951 94, 231125 (2009). 10.1063/1.3154565
- (2009) Appl. Phys. Lett. , vol.94 , pp. 231125
- Walter, G.¹ Wu, C.H.² Then, H.W.³ Feng, M.⁴ Holonyak Jr., N.⁵

23
- 67649202723
- APPLAB 0003-6951,. 10.1063/1.3153146
- G. Walter, C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. APPLAB 0003-6951 94, 241101 (2009). 10.1063/1.3153146
- (2009) Appl. Phys. Lett. , vol.94 , pp. 241101
- Walter, G.¹ Wu, C.H.² Then, H.W.³ Feng, M.⁴ Holonyak Jr., N.⁵

24
- 0000498434
- SSELA5 0038-1101,. 10.1016/0038-1101(64)90070-X
- S. S. Perlman and D. L. Feucht, Solid-State Electron. SSELA5 0038-1101 7, 911 (1964). 10.1016/0038-1101(64)90070-X
- (1964) Solid-State Electron. , vol.7 , pp. 911
- Perlman, S.S.¹ Feucht, D.L.²

25
- 0022810417
- SSELA5 0038-1101,. 10.1016/0038-1101(86)90061-4
- M. S. Lundstrom, Solid-State Electron. SSELA5 0038-1101 29, 1173 (1986). 10.1016/0038-1101(86)90061-4
- (1986) Solid-State Electron. , vol.29 , pp. 1173
- Lundstrom, M.S.¹

26
- 0027607898
- Electron quasi-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's
- DOI 10.1109/16.214752
- D. L. Pulfrey and S. Searles, IEEE Trans. Electron Devices IETDAI 0018-9383 40, 1183 (1993). 10.1109/16.214752 (Pubitemid 23686392)
- (1993) IEEE Transactions on Electron Devices , vol.40 , Issue.6 , pp. 1183-1185
- Pulfrey David, L.¹ Scarles Shawn²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.