-
1
-
-
33745521344
-
-
0031-9007,. 10.1103/PhysRevLett.9.366
-
R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, Phys. Rev. Lett. 0031-9007 9, 366 (1962). 10.1103/PhysRevLett.9.366
-
(1962)
Phys. Rev. Lett.
, vol.9
, pp. 366
-
-
Hall, R.N.1
Fenner, G.E.2
Kingsley, J.D.3
Soltys, T.J.4
Carlson, R.O.5
-
3
-
-
0002635081
-
-
0003-6951,. 10.1063/1.1777371
-
M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr., and G. Lasher, Appl. Phys. Lett. 0003-6951 1, 62 (1962). 10.1063/1.1777371
-
(1962)
Appl. Phys. Lett.
, vol.1
, pp. 62
-
-
Nathan, M.I.1
Dumke, W.P.2
Burns, G.3
Dill Jr., F.H.4
Lasher, G.5
-
4
-
-
36849137461
-
-
0003-6951,. 10.1063/1.1753710
-
T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, and H. J. Zeiger, Appl. Phys. Lett. 0003-6951 1, 91 (1962). 10.1063/1.1753710
-
(1962)
Appl. Phys. Lett.
, vol.1
, pp. 91
-
-
Quist, T.M.1
Rediker, R.H.2
Keyes, R.J.3
Krag, W.E.4
Lax, B.5
McWhorter, A.L.6
Zeiger, H.J.7
-
5
-
-
0037620149
-
-
IRE Solid State Device Research Conference, Durham, NH, (unpublished); See also, 0096-8390, (1962). 10.1109/JRPROC.1962.288223
-
R. J. Keyes and T. M. Quist, IRE Solid State Device Research Conference, Durham, NH, 1962 (unpublished); See also, R. J. Keyes and T. M. Quist, Proc. IRE 0096-8390 50, 1822 (1962). 10.1109/JRPROC.1962.288223
-
(1962)
Proc. IRE
, vol.50
, pp. 1822
-
-
Keyes, R.J.1
Quist, T.M.2
Keyes, R.J.3
Quist, T.M.4
-
6
-
-
85012662460
-
-
0013-5194,. 10.1049/el:19760421
-
J. Heinen, W. Hurber, and W. Harth, Electron. Lett. 0013-5194 12, 553 (1976). 10.1049/el:19760421
-
(1976)
Electron. Lett.
, vol.12
, pp. 553
-
-
Heinen, J.1
Hurber, W.2
Harth, W.3
-
7
-
-
0032633397
-
-
1077-260X,. 10.1109/2944.778275
-
R. H. Windisch, A. Knobloch, J. Potemans, B. Dutta, G. H. Dohler, G. Borghs, and P. L. Heremans, IEEE J. Sel. Top. Quantum Electron. 1077-260X 5, 166 (1999). 10.1109/2944.778275
-
(1999)
IEEE J. Sel. Top. Quantum Electron.
, vol.5
, pp. 166
-
-
Windisch, R.H.1
Knobloch, A.2
Potemans, J.3
Dutta, B.4
Dohler, G.H.5
Borghs, G.6
Heremans, P.L.7
-
8
-
-
0035079546
-
-
1041-1135,. 10.1109/68.903229
-
M. Akbulut, C. H. Chen, M. Hargis, A. M. Weiner, M. R. Melloch, and J. M. Woodall, IEEE Photon. Technol. Lett. 1041-1135 13, 85 (2001). 10.1109/68.903229
-
(2001)
IEEE Photon. Technol. Lett.
, vol.13
, pp. 85
-
-
Akbulut, M.1
Chen, C.H.2
Hargis, M.3
Weiner, A.M.4
Melloch, M.R.5
Woodall, J.M.6
-
9
-
-
0032607921
-
-
0003-6951,. 10.1063/1.124092
-
C. H. Chen, M. Hargis, J. M. Woodall, M. R. Melloch, J. S. Reynolds, W. Wang, and E. Yablonovitch, Appl. Phys. Lett. 0003-6951 74, 3140 (1999). 10.1063/1.124092
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3140
-
-
Chen, C.H.1
Hargis, M.2
Woodall, J.M.3
Melloch, M.R.4
Reynolds, J.S.5
Wang, W.6
Yablonovitch, E.7
-
10
-
-
0942278263
-
-
0003-6951,. 10.1063/1.1637950
-
M. Feng, N. Holonyak, Jr., and W. Hafez, Appl. Phys. Lett. 0003-6951 84, 151 (2004). 10.1063/1.1637950
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 151
-
-
Feng, M.1
Holonyak Jr., N.2
Hafez, W.3
-
11
-
-
1842637201
-
-
0003-6951,. 10.1063/1.1669071
-
M. Feng, N. Holonyak, Jr., and R. Chan, Appl. Phys. Lett. 0003-6951 84, 1952 (2004). 10.1063/1.1669071
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 1952
-
-
Feng, M.1
Holonyak Jr., N.2
Chan, R.3
-
12
-
-
10944222730
-
-
0003-6951,. 10.1063/1.1818331
-
G. Walter, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. Phys. Lett. 0003-6951 85, 4768 (2004). 10.1063/1.1818331
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 4768
-
-
Walter, G.1
Holonyak Jr., N.2
Feng, M.3
Chan, R.4
-
13
-
-
65449139928
-
-
0003-6951,. 10.1063/1.3126642
-
C. H. Wu, G. Walter, H. W. Then, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. 0003-6951 94, 171101 (2009). 10.1063/1.3126642
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 171101
-
-
Wu, C.H.1
Walter, G.2
Then, H.W.3
Feng, M.4
Holonyak Jr., N.5
-
14
-
-
84899096654
-
-
0003-6951 (unpublished).
-
G. Walter, C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. 0003-6951 (unpublished).
-
Appl. Phys. Lett.
-
-
Walter, G.1
Wu, C.H.2
Then, H.W.3
Feng, M.4
Holonyak Jr., N.5
-
15
-
-
34547659169
-
-
0003-6951,. 10.1063/1.2767172
-
M. Feng, N. Holonyak, Jr., H. W. Then, and G. Walter, Appl. Phys. Lett. 0003-6951 91, 053501 (2007). 10.1063/1.2767172
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 053501
-
-
Feng, M.1
Holonyak Jr., N.2
Then, H.W.3
Walter, G.4
-
16
-
-
65449166659
-
-
(Academic, New York), Vol.,.
-
M. G. Craford, High Brightness Light Emitting Diodes, Semiconductors and Semimetals (Academic, New York, 1997), Vol. 48, p. 56.
-
(1997)
High Brightness Light Emitting Diodes, Semiconductors and Semimetals
, vol.48
, pp. 56
-
-
Craford, M.G.1
-
17
-
-
0000399591
-
-
0003-6951,. 10.1063/1.123452
-
J. J. Wierer, D. A. Kellogg, and N. Holonyak, Jr., Appl. Phys. Lett. 0003-6951 74, 926 (1999). 10.1063/1.123452
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 926
-
-
Wierer, J.J.1
Kellogg, D.A.2
Holonyak Jr., N.3
-
18
-
-
0013275925
-
-
0003-6951,. 10.1063/1.105444
-
T. J. de Lyon, J. M. Woodall, D. T. McInturff, P. D. Kirchner, J. A. Kash, R. J. S. Bates, R. T. Hodgson, and F. Cardone, Appl. Phys. Lett. 0003-6951 59, 402 (1991). 10.1063/1.105444
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 402
-
-
De Lyon, T.J.1
Woodall, J.M.2
McInturff, D.T.3
Kirchner, P.D.4
Kash, J.A.5
Bates, R.J.S.6
Hodgson, R.T.7
Cardone, F.8
|