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Volumn 94, Issue 23, 2009, Pages

Tilted-charge high speed (7 GHz) light emitting diode

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BASE TRANSIT TIME; DESIGN AND CONSTRUCTION; DRAIN LAYERS; LIGHT-EMITTING TRANSISTORS; LOW CURRENTS; P-TYPE; QUANTUM WELL; RECOMBINATION LIFETIME;

EID: 67649094334     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3154565     Document Type: Article
Times cited : (49)

References (18)
  • 5
    • 0037620149 scopus 로고
    • IRE Solid State Device Research Conference, Durham, NH, (unpublished); See also, 0096-8390, (1962). 10.1109/JRPROC.1962.288223
    • R. J. Keyes and T. M. Quist, IRE Solid State Device Research Conference, Durham, NH, 1962 (unpublished); See also, R. J. Keyes and T. M. Quist, Proc. IRE 0096-8390 50, 1822 (1962). 10.1109/JRPROC.1962.288223
    • (1962) Proc. IRE , vol.50 , pp. 1822
    • Keyes, R.J.1    Quist, T.M.2    Keyes, R.J.3    Quist, T.M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.