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Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

Scaling of light emitting transistor for multigigahertz optical bandwidth

(5) Wu, C H a Walter, G b Then, H W a Feng, M a Holonyak, N a

a University of Illinois at Urbana Champaign (United States)

b Quantum Electro Opto Systems Sdn Bhd (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

APERTURE SIZES; CARRIER LOSS; CARRIER RECOMBINATIONS; CIRCUIT MATCHING; CURRENT GAINS; GAAS; INJECTION CURRENT DENSITIES; LIGHT-EMITTING TRANSISTORS; OPTICAL BAND WIDTHS; RADIATIVE RECOMBINATIONS; SIGNAL BANDWIDTHS; THREE-TERMINAL DEVICES;

LIGHT EMISSION; PHOTOTRANSISTORS;

BANDWIDTH;

EID: 65449139928 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3126642 Document Type: Article

Times cited : (33)

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