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Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser

(6) Feng, M a Holonyak Jr , N a James, A a Cimino, K a Walter, G a Chan, R a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER PHOTON DAMPING RATIO; MODULATION BANDWIDTH; RESONANT PEAK MAGNITUDES; TRANSISTOR LASERS;

BANDWIDTH; DAMPING; FREQUENCY MODULATION; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

TRANSISTORS;

EID: 33748677500 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2346369 Document Type: Article

Times cited : (71)

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