Tunnel junction transistor laser

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Feng, M ^a   Holonyak, N ^a   Then, H W ^a   Wu, C H ^a   Walter, G ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LASERS; TRANSISTORS; TUNNEL DIODES; TUNNELS; VOLTAGE CONTROL; VOLTAGE REGULATORS;

COLLECTOR JUNCTIONS; DIRECTLY-MODULATED; LASER OPERATIONS; OHMIC CURRENTS; OPTICAL OUTPUTS; RESUPPLY; TERMINAL VOLTAGE CONTROLS; TRANSISTOR LASERS;

TUNNEL JUNCTIONS;

EID: 59349116495     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077020     Document Type: Article

References (8)

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4. A. James, N. Holonyak, Jr., M. Feng, and G. Walter, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 10.1109/LPT.2007.895049 19, 680 (2007).
5. C. M. Wolfe, N. Holonyak, Jr., and G. E. Stillman, Physical Properties of Semiconductors (Prentice Hall, Englewood Cliffs, NJ, 1989), pp. 219-220.
6. A. James, G. Walter, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2721364 90, 152109 (2007).
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8. M. Feng, N. Holonyak, Jr., A. James, K. Cimino, G. Walter, and R. Chan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2346369 89, 113504 (2006).