Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

Applied Physics Letters

Volumn 84, Issue 1, 2004, Pages 151-153

  Feng, M ^a   Holonyak Jr , N ^a   Hafez, W ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER PROCESSES; LIGHT-EMITTING TRANSISTORS (LET); RADIATIVE PROCESSES;

CATHODE RAY OSCILLOSCOPES; CURRENT DENSITY; GALLIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT MODULATION; SAMPLING; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0942278263     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637950     Document Type: Article

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