Carrier lifetime studies of semi-insulating silicon carbide for photoconductive switch applications

Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Volumn , Issue , 2010, Pages 34-37

  Hettler, C ^a   James, C ^a   Dickens, J ^a   Neuber, A ^a  

^a Texas Tech University   (United States)

Author keywords

carrier lifetime; photoconductive switching; recombination lifetime; semi insulating; silicon carbide

Indexed keywords

BULK RESISTIVITY; CONTACT LESS; HIGH-PURITY SEMI-INSULATING; MICROWAVE PHOTOCONDUCTIVITY; MICROWAVE SIGNALS; PHOTOCONDUCTIVE RESPONSE; PHOTOCONDUCTIVE SWITCHES; PHOTOCONDUCTIVE SWITCHING; PHOTORESPONSES; RECOMBINATION CENTERS; RECOMBINATION LIFETIME; SEMI-INSULATING; SIC SUBSTRATES;

ENERGY GAP; INSULATION; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; VANADIUM; VANADIUM ALLOYS;

CARRIER LIFETIME;

EID: 80051779579     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPMHVC.2010.5958289     Document Type: Conference Paper

References (9)

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