Optically activated 4H-SiC p-i-n diodes for high-power applications

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1182-1184

  Zhao, Feng ^a   Islam, Mohammad M ^a   Muzykov, Peter ^a   Bolotnikov, Alex ^a,b   Sudarshan, Tangali S ^a  

^a University of South Carolina   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

Bistable switches; Optically activated; P i n diode; SiC

Indexed keywords

4H-SIC SUBSTRATE; BISTABLE SWITCHES; CURRENT-LIMITING RESISTORS; DEVICE TECHNOLOGIES; FALL TIME; FURTHER DEVELOPMENT; HIGH POWER APPLICATIONS; HIGH TEMPERATURE; HIGH-POWER; HIGH-SPEED; JUNCTION CAPACITANCES; OPTICAL ENERGY; OPTICALLY ACTIVATED; OPTICALLY CONTROLLED; P-I-N DIODE; RC TIME CONSTANTS; RESPONSE TIME; REVERSE BIAS; RISETIMES; SIC; TEST CIRCUIT;

DIODES; POWER ELECTRONICS; PULSED LASER APPLICATIONS; SILICON CARBIDE; SWITCHES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350612873     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2031419     Document Type: Article

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