Electrical and optical modeling of 4H-SiC avalanche photodiodes

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5423-5425

  Cha, Ho Young ^a   Sandvik, Peter M ^a,b  

^a Hong Ik University   (South Korea)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

Absorption coefficient; Avalanche photodiode; Modeling; Silicon carbide; Ultraviolet

Indexed keywords

ABSORPTION; AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); HETEROJUNCTION BIPOLAR TRANSISTORS; MODELS; NUMERICAL ANALYSIS; PHOTODIODES; SILICON; SILICON CARBIDE; SNOW;

AB SORPTION COEFFICIENTS; ABSORPTION COEFFICIENT; ABSORPTION COEFFICIENT SPECTRUMS; BAND TRANSITIONS; DEVICE SIMULATIONS; MATERIAL PARAMETERS; MODELING; OPTICAL MODELING; PHYSICAL MODELS; ULTRAVIOLET;

IMPACT IONIZATION;

EID: 55149090298     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5423     Document Type: Article

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