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Volumn 102, Issue 1, 2007, Pages

Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARACTERIZATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; MICROWAVES; ONE DIMENSIONAL; PHOTOCONDUCTIVITY; SUBSTRATES;

EID: 34547227219     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2751086     Document Type: Article
Times cited : (15)

References (32)
  • 2
    • 34547203544 scopus 로고    scopus 로고
    • Wide Bandgap Devices
    • edited by J. C.Zolper and B. V.Shanabrook
    • Wide Bandgap Devices, edited by, J. C. Zolper, and, B. V. Shanabrook, Proc. IEEE, 90, 1 (2002).
    • (2002) Proc. IEEE , vol.90 , pp. 1
  • 4
    • 3142743150 scopus 로고    scopus 로고
    • edited by Z. C.Feng and J. H.Zhao (Taylor and Francis, London
    • Silicon Carbide: Materials, Processing and Devices, edited by, Z. C. Feng, and, J. H. Zhao, (Taylor and Francis, London, 2004).
    • (2004) Silicon Carbide: Materials, Processing and Devices
  • 7
    • 34547187106 scopus 로고    scopus 로고
    • Proceedings of ICSCRM 2003 (Trans Tech, Zurich
    • H. McD. Hobgood, Silicon Carbide and Related Materials, Proceedings of ICSCRM 2003 (Trans Tech, Zurich, 2004), pp. 3-8.
    • (2004) Silicon Carbide and Related Materials , pp. 3-8
    • McD., H.H.1
  • 27
    • 34547168980 scopus 로고    scopus 로고
    • PC-1D, Version 5.5, Photovoltaics Special Research Center at the University of South Wales, Sydney, Australia.
    • PC-1D, Version 5.5, Photovoltaics Special Research Center at the University of South Wales, Sydney, Australia.
  • 28
    • 18844459488 scopus 로고    scopus 로고
    • edited by W. J.Choyke, H.Matsunami, and G.Pensl (Springer-Verlag, New York
    • Silicon Carbide, Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer-Verlag, New York, 2004).
    • (2004) Silicon Carbide, Recent Major Advances
  • 29
    • 0003597031 scopus 로고
    • edited by G. L.Harris (INSPEC, London
    • Properties of Silicon Carbide, edited by, G. L. Harris, (INSPEC, London, 1995).
    • (1995) Properties of Silicon Carbide


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.